aod4146/AOI4146 30v n-channel mosfet v ds i d (at v gs =10v) 55a r ds(on) (at v gs =10v) < 5.6m w r ds(on) (at v gs = 4.5v) < 9.5m w symbol the aod4146/AOI4146 is fabricated with sdmos tm trench technology that combines excellent r ds(on) with low gate charge.the result is outstanding efficiency wi th controlled switching behavior. this universal techn ology is well suited for pwm, load switching and general pur pose applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g d s v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2 50 2.4 w power dissipation a p dsm w t a =70c 62 1.6 t a =25c i d 55 43 t c =25c t c =100c power dissipation b p d continuous drain current 63 15 a 50 a t a =25c i dsm a t a =70c v 20 v 20 gate-source voltage drain-source voltage 30 avalanche energy l=0.05mh c mj avalanche current c 12 junction and storage temperature range -55 to 175 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 15 41 190 pulsed drain current c continuous drain current g parameter typ max t c =25c 2.5 31 t c =100c 1/7 www.freescale.net.cn general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 100 t j =55c 500 i gss 100 na v gs(th) gate threshold voltage 1.6 2.1 3 v i d(on) 190 a 4.7 5.6 t j =125c 7.4 8.9 7.9 9.5 m w g fs 50 s v sd 0.7 1 v i s 55 a c iss 1630 2037 2440 pf c oss 260 375 490 pf c rss 130 220 300 pf r g 0.5 1.1 1.7 w q g (10v) 28 35 42 nc q g (4.5v) 13 16 20 nc q gs 6.8 8.6 10 nc q gd 2.8 4.6 6.4 nc t d(on) 8.8 ns t 26 ns reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =10a forward transconductance diode forward voltage v =10v, v =15v, r =0.75 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time t r 26 ns t d(off) 23 ns t f 6 ns t rr 8 10 12 ns q rr 12 15 18 nc i f =20a, di/dt=500a/ m s body diode reverse recovery time v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by bond-wi res. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/7 aod4146/AOI4146 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 3 6 9 12 15 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.5v 4v 6v 7v 10v 4.5v 5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 4 8 12 16 20 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/7 aod4146/AOI4146 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- c oss c rss v ds =15v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) t j(max) =175 c t c =25 c 100 m s 40 case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =2.4 c/w www.freescale.net.cn 4/7 aod4146/AOI4146 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 10 100 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) 0 20 40 60 80 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 14: current de - rating (note f) t a =25 c 1 10 100 1000 10000 100000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =50 c/w www.freescale.net.cn 5/7 aod4146/AOI4146 30v n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 12 0 5 10 15 20 25 30 0 5 10 15 20 25 30 i rm (a) q rr (nc) i s (a) figure 17: diode reverse recovery charge and peak current vs. conduction current di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 2 4 6 8 10 0 5 10 15 20 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 19: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 s t rr (ns) i s (a) figure 18: diode reverse recovery time and softness factor vs. conduction current di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 0 0.5 1 1.5 2 2.5 0 3 6 9 12 15 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 20: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 25oc 125o i s =20a t rr s www.freescale.net.cn 6/7 aod4146/AOI4146 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 7/7 aod4146/AOI4146 30v n-channel mosfet
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